BC847CDW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

DC Current Gain (hFE) (Min) @ Ic, Vce :

420 @ 2mA 5V

Transition Frequency :

100MHz

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

JESD-609 Code :

e3

Collector Emitter Saturation Voltage :

600mV

Collector Emitter Voltage (VCEO) :

45V

Polarity :

NPN

Voltage - Rated DC :

45V

Package / Case :

6-TSSOP, SC-88, SOT-363

ECCN Code :

EAR99

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

40

Max Collector Current :

100mA

Base Part Number :

BC847CD

Radiation Hardening :

No

Published :

2004

Power Dissipation :

380mW

Emitter Base Voltage (VEBO) :

6V

Factory Lead Time :

8 Weeks

Number of Terminations :

6

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

15nA ICBO

Collector Emitter Breakdown Voltage :

45V

Packaging :

Tape and Reel (TR)

Contact Plating :

Tin

Length :

2.2mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Current Rating :

100mA

Number of Pins :

6

Collector Base Voltage (VCBO) :

50V

Gain Bandwidth Product :

100MHz

Number of Elements :

2

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Dual

REACH SVHC :

No SVHC

Width :

1.35mm

Transistor Type :

2 NPN (Dual)

Transistor Application :

AMPLIFIER

Height :

1.1mm

Pin Count :

6

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

380mW

Max Breakdown Voltage :

45V

Halogen Free :

Halogen Free

Frequency :

100MHz

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

hFE Min :

420