BC847CDLP-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

DC Current Gain (hFE) (Min) @ Ic, Vce :

420 @ 2mA 5V

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Case Connection :

COLLECTOR

Factory Lead Time :

19 Weeks

REACH SVHC :

No SVHC

Collector Base Voltage (VCBO) :

50V

Power Dissipation :

350mW

Operating Temperature :

-65°C~150°C TJ

Element Configuration :

Dual

Collector Emitter Saturation Voltage :

900mV

Polarity :

NPN

RoHS Status :

ROHS3 Compliant

Emitter Base Voltage (VEBO) :

6V

Mount :

Surface Mount

Pbfree Code :

yes

Gain Bandwidth Product :

100MHz

Collector Emitter Breakdown Voltage :

45V

Number of Terminations :

6

Published :

2012

Transistor Type :

2 NPN (Dual)

Number of Elements :

2

Height :

350μm

Length :

1.3mm

Contact Plating :

Gold

ECCN Code :

EAR99

Package / Case :

6-XFDFN Exposed Pad

Packaging :

Tape and Reel (TR)

Number of Pins :

6

Radiation Hardening :

No

Frequency :

100MHz

Width :

1mm

JESD-609 Code :

e4

Pin Count :

6

Transition Frequency :

100MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

15nA

Max Power Dissipation :

350mW

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

hFE Min :

420

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Base Part Number :

BC847CD

Time@Peak Reflow Temperature-Max (s) :

40

Max Collector Current :

100mA

Collector Emitter Voltage (VCEO) :

45V

Terminal Position :

BOTTOM

Max Breakdown Voltage :

45V