BC847C/DG/B3215
- Mfr.Part #
- BC847C/DG/B3215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A TO236AB
- Stock
- 258,000
- In Stock :
- 258,000
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Current - Collector (Ic) (Max) :
- 100mA
- Voltage - Collector Emitter Breakdown (Max) :
- 45V
- Frequency - Transition :
- 100MHz
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Power - Max :
- 250mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Datasheets
- BC847C/DG/B3215

NPN 150°C TJ 15nA ICBO TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC847C/DG/B3,215 Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 100mA.The device exhibits a collector-emitter breakdown at 45V.
BC847C/DG/B3,215 Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
BC847C/DG/B3,215 Applications
There are a lot of Nexperia USA Inc.
BC847C/DG/B3,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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