BC847C

Manufacturer :

Diotec Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single

hFE Min :

110

Collector Emitter Voltage (VCEO) :

45 V

JESD-30 Code :

R-PDSO-G3

JESD-609 Code :

e3

Power Dissipation :

250 mW

Configuration :

Single

Emitter Base Voltage (VEBO) :

6 V

Gain Bandwidth Product :

100 MHz

Max Power Dissipation :

250 mW

Max Operating Temperature :

150 °C

Min Operating Temperature :

-65 °C

Surface Mount :

yes

DC Current Gain-Min (hFE) :

420

Qualification Status :

Not Qualified

Collector Base Voltage (VCBO) :

50 V

Collector Current-Max (IC) :

0.1 A

Current :

1 A

Ambient Temperature Range High :

150 °C

Polarity :

NPN

Polarity/Channel Type :

NPN

Subcategory :

Other Transistors

Max Junction Temperature (Tj) :

150 °C

Peak Reflow Temperature (Cel) :

260

Voltage :

45 V

JEDEC-95 Code :

TO-236

Terminal Form :

Gull wing

Number of Terminals :

3

Number of Elements :

1

Power Dissipation-Max (Abs) :

0.31 W

Max Collector Current :

100 mA

Collector Emitter Saturation Voltage :

200 mV

Termination :

SMD/SMT

Reach Compliance Code :

Compliant

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Collector-Emitter Voltage-Max :

45 V

Number of Pins :

3

RoHS :

Compliant

Package Shape :

RECTANGULAR

HTS Code :

8541.21.00

Pin Count :

3

Transition Frequency :

100 MHz

Manufacturer :

Diotec Semiconductor AG

Mount :

Reverse

Terminal Position :

Dual

Collector Emitter Breakdown Voltage :

45 V

Height :

1.1 mm

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn) - annealed