BC847C

Manufacturer :

Diotec Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-609 Code :

e3

Number of Pins :

3

Collector Current-Max (IC) :

0.1 A

Number of Terminals :

3

Current :

1 A

Max Power Dissipation :

250 mW

Termination :

SMD/SMT

Collector-Emitter Voltage-Max :

45 V

Power Dissipation :

250 mW

Qualification Status :

Not Qualified

DC Current Gain-Min (hFE) :

420

JEDEC-95 Code :

TO-236

RoHS :

Compliant

Configuration :

Single

Height :

1.1 mm

REACH SVHC :

No SVHC

Manufacturer :

Diotec Semiconductor AG

Terminal Position :

Dual

HTS Code :

8541.21.00

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-G3

Max Operating Temperature :

150 °C

Collector Emitter Voltage (VCEO) :

45 V

Emitter Base Voltage (VEBO) :

6 V

Max Junction Temperature (Tj) :

150 °C

Reach Compliance Code :

Compliant

Number of Elements :

1

Package Shape :

RECTANGULAR

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Subcategory :

Other Transistors

Polarity :

NPN

Min Operating Temperature :

-65 °C

Pin Count :

3

Collector Base Voltage (VCBO) :

50 V

Max Collector Current :

100 mA

Peak Reflow Temperature (Cel) :

260

Polarity/Channel Type :

NPN

Power Dissipation-Max (Abs) :

0.31 W

Gain Bandwidth Product :

100 MHz

Mount :

Reverse

hFE Min :

110

Terminal Finish :

Matte Tin (Sn) - annealed

Ambient Temperature Range High :

150 °C

Surface Mount :

yes

Transition Frequency :

100 MHz

Collector Emitter Saturation Voltage :

200 mV

Collector Emitter Breakdown Voltage :

45 V

Voltage :

45 V