BC847C

Manufacturer :

Diotec Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single

Configuration :

Single

Min Operating Temperature :

-65 °C

Max Power Dissipation :

250 mW

HTS Code :

8541.21.00

Collector Emitter Breakdown Voltage :

45 V

Surface Mount :

yes

Transition Frequency :

100 MHz

Collector-Emitter Voltage-Max :

45 V

ECCN Code :

EAR99

Transistor Element Material :

SILICON

DC Current Gain-Min (hFE) :

420

Peak Reflow Temperature (Cel) :

260

Gain Bandwidth Product :

100 MHz

Power Dissipation :

250 mW

Current :

1 A

Collector Emitter Voltage (VCEO) :

45 V

Polarity :

NPN

Emitter Base Voltage (VEBO) :

6 V

Terminal Form :

Gull wing

Number of Elements :

1

Height :

1.1 mm

JEDEC-95 Code :

TO-236

Termination :

SMD/SMT

Qualification Status :

Not Qualified

Collector Current-Max (IC) :

0.1 A

Max Operating Temperature :

150 °C

JESD-609 Code :

e3

Manufacturer :

Diotec Semiconductor AG

Reach Compliance Code :

Compliant

Pin Count :

3

Package Shape :

RECTANGULAR

Power Dissipation-Max (Abs) :

0.31 W

Collector Emitter Saturation Voltage :

200 mV

Max Junction Temperature (Tj) :

150 °C

RoHS :

Compliant

Ambient Temperature Range High :

150 °C

Number of Terminals :

3

Subcategory :

Other Transistors

Polarity/Channel Type :

NPN

REACH SVHC :

No SVHC

Terminal Position :

Dual

Mount :

Reverse

Max Collector Current :

100 mA

Number of Pins :

3

Collector Base Voltage (VCBO) :

50 V

Terminal Finish :

Matte Tin (Sn) - annealed

JESD-30 Code :

R-PDSO-G3

hFE Min :

110

Voltage :

45 V