BC847C

Manufacturer :

MDD

Product Category :

Transistors - Bipolar (BJT) - Single

Ambient Temperature Range High :

150 °C

Gain Bandwidth Product :

100 MHz

DC Current Gain-Min (hFE) :

420

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Max Collector Current :

100 mA

Collector Emitter Breakdown Voltage :

45 V

Power Dissipation-Max (Abs) :

0.31 W

Package Shape :

RECTANGULAR

Max Junction Temperature (Tj) :

150 °C

Terminal Position :

Dual

Number of Pins :

3

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Subcategory :

Other Transistors

Configuration :

Single

Termination :

SMD/SMT

ECCN Code :

EAR99

Min Operating Temperature :

-65 °C

Collector Base Voltage (VCBO) :

50 V

Power Dissipation :

250 mW

Number of Elements :

1

Mount :

Reverse

Collector Emitter Saturation Voltage :

200 mV

Emitter Base Voltage (VEBO) :

6 V

HTS Code :

8541.21.00

Terminal Form :

Gull wing

JEDEC-95 Code :

TO-236

Pin Count :

3

Voltage :

45 V

Reach Compliance Code :

Compliant

Current :

1 A

Polarity :

NPN

Collector-Emitter Voltage-Max :

45 V

Transistor Element Material :

SILICON

hFE Min :

110

Collector Current-Max (IC) :

0.1 A

Transition Frequency :

100 MHz

Collector Emitter Voltage (VCEO) :

45 V

Polarity/Channel Type :

NPN

Manufacturer :

Diotec Semiconductor AG

Number of Terminals :

3

Max Power Dissipation :

250 mW

Surface Mount :

yes

JESD-30 Code :

R-PDSO-G3

Max Operating Temperature :

150 °C

RoHS :

Compliant

Terminal Finish :

Matte Tin (Sn) - annealed

Height :

1.1 mm