BC847C

Manufacturer :

MDD

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Position :

Dual

Transistor Element Material :

SILICON

Max Junction Temperature (Tj) :

150 °C

JESD-609 Code :

e3

Reach Compliance Code :

Compliant

Terminal Form :

Gull wing

hFE Min :

110

Qualification Status :

Not Qualified

RoHS :

Compliant

HTS Code :

8541.21.00

Manufacturer :

Diotec Semiconductor AG

REACH SVHC :

No SVHC

Polarity :

NPN

Height :

1.1 mm

Max Operating Temperature :

150 °C

Configuration :

Single

Collector Emitter Voltage (VCEO) :

45 V

Subcategory :

Other Transistors

Voltage :

45 V

Max Power Dissipation :

250 mW

Polarity/Channel Type :

NPN

Collector Emitter Saturation Voltage :

200 mV

Max Collector Current :

100 mA

Power Dissipation :

250 mW

JEDEC-95 Code :

TO-236

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Matte Tin (Sn) - annealed

Ambient Temperature Range High :

150 °C

Min Operating Temperature :

-65 °C

JESD-30 Code :

R-PDSO-G3

Collector Base Voltage (VCBO) :

50 V

Power Dissipation-Max (Abs) :

0.31 W

Collector-Emitter Voltage-Max :

45 V

Termination :

SMD/SMT

Number of Elements :

1

Number of Terminals :

3

DC Current Gain-Min (hFE) :

420

Collector Emitter Breakdown Voltage :

45 V

Pin Count :

3

Package Shape :

RECTANGULAR

ECCN Code :

EAR99

Current :

1 A

Mount :

Reverse

Collector Current-Max (IC) :

0.1 A

Number of Pins :

3

Gain Bandwidth Product :

100 MHz

Surface Mount :

yes

Emitter Base Voltage (VEBO) :

6 V

Transition Frequency :

100 MHz