BC847C

Manufacturer :

MDD

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Saturation Voltage :

200 mV

Max Power Dissipation :

250 mW

Collector Current-Max (IC) :

0.1 A

Termination :

SMD/SMT

hFE Min :

110

Gain Bandwidth Product :

100 MHz

HTS Code :

8541.21.00

REACH SVHC :

No SVHC

Max Operating Temperature :

150 °C

Subcategory :

Other Transistors

Power Dissipation :

250 mW

Qualification Status :

Not Qualified

Polarity :

NPN

RoHS :

Compliant

Pin Count :

3

Terminal Position :

Dual

ECCN Code :

EAR99

JEDEC-95 Code :

TO-236

Reach Compliance Code :

Compliant

DC Current Gain-Min (hFE) :

420

Collector Base Voltage (VCBO) :

50 V

Collector-Emitter Voltage-Max :

45 V

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn) - annealed

Power Dissipation-Max (Abs) :

0.31 W

Ambient Temperature Range High :

150 °C

Transistor Element Material :

SILICON

Number of Pins :

3

Number of Terminals :

3

Peak Reflow Temperature (Cel) :

260

Configuration :

Single

Max Junction Temperature (Tj) :

150 °C

Number of Elements :

1

Height :

1.1 mm

Emitter Base Voltage (VEBO) :

6 V

Collector Emitter Breakdown Voltage :

45 V

Polarity/Channel Type :

NPN

JESD-30 Code :

R-PDSO-G3

Max Collector Current :

100 mA

Package Shape :

RECTANGULAR

Min Operating Temperature :

-65 °C

Transition Frequency :

100 MHz

Current :

1 A

Manufacturer :

Diotec Semiconductor AG

Voltage :

45 V

Mount :

Reverse

JESD-609 Code :

e3

Collector Emitter Voltage (VCEO) :

45 V

Surface Mount :

yes