BC847BWT1G
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- Mfr.Part #
- BC847BWT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SC70-3
- Stock
- 778
- In Stock ：
- 778
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- hFE Min :
- 150
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- SC-70, SOT-323
- Element Configuration :
- Single
- Width :
- 1.35mm
- Frequency :
- 100MHz
- Pin Count :
- 3
- Terminal Form :
- Gull wing
- Surface Mount :
- yes
- Voltage - Rated DC :
- 45V
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 45V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 45V
- Collector Emitter Saturation Voltage :
- 600mV
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Lead Free :
- Lead Free
- Current Rating :
- 100mA
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Gain Bandwidth Product :
- 100MHz
- Polarity/Channel Type :
- NPN
- Length :
- 2.2mm
- Contact Plating :
- Tin
- Transistor Type :
- NPN
- Height :
- 900μm
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 5 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Transition Frequency :
- 100MHz
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 50V
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Application :
- AMPLIFIER
- Packaging :
- Tape and Reel (TR)
- Halogen Free :
- Halogen Free
- Power Dissipation :
- 150mW
- Published :
- 2005
- Max Collector Current :
- 100mA
- Collector Emitter Breakdown Voltage :
- 45V
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Terminal Position :
- Dual
- Max Power Dissipation :
- 150mW
- Datasheets
- BC847BWT1G
BC847BWT1G Documents
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC847BWT1G Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 600mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (100mA).100MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BC847BWT1G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC847BWT1G Applications
There are a lot of ON Semiconductor
BC847BWT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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