BC847BWT1G
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- Mfr.Part #
- BC847BWT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SC70-3
- Stock
- 778
- In Stock ：
- 778
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 45V
- Contact Plating :
- Tin
- hFE Min :
- 150
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Base Voltage (VCBO) :
- 50V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Collector Current :
- 100mA
- Width :
- 1.35mm
- Transition Frequency :
- 100MHz
- Voltage - Rated DC :
- 45V
- Gain Bandwidth Product :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Factory Lead Time :
- 5 Weeks
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 150mW
- Frequency :
- 100MHz
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Transistor Application :
- AMPLIFIER
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 45V
- Current Rating :
- 100mA
- Transistor Element Material :
- SILICON
- Halogen Free :
- Halogen Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Package / Case :
- SC-70, SOT-323
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Height :
- 900μm
- Pbfree Code :
- yes
- Transistor Type :
- NPN
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 150mW
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- yes
- Polarity/Channel Type :
- NPN
- Pin Count :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Max Breakdown Voltage :
- 45V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Lead Free :
- Lead Free
- Length :
- 2.2mm
- Published :
- 2005
- Collector Emitter Saturation Voltage :
- 600mV
- Datasheets
- BC847BWT1G
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC847BWT1G Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 600mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (100mA).100MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BC847BWT1G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC847BWT1G Applications
There are a lot of ON Semiconductor
BC847BWT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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