BC847BWT1
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- Mfr.Part #
- BC847BWT1
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANSISTOR NPN 45V 100MA SOT-323
- Stock
- 17,130
- In Stock ：
- 17,130
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 50V
- Published :
- 2005
- Emitter Base Voltage (VEBO) :
- 6V
- Element Configuration :
- Single
- Power Dissipation :
- 150mW
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Number of Pins :
- 3
- Package / Case :
- SC-70, SOT-323
- Surface Mount :
- yes
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 5 Weeks
- Polarity/Channel Type :
- NPN
- Voltage - Rated DC :
- 45V
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Length :
- 2.2mm
- Collector Emitter Voltage (VCEO) :
- 45V
- Width :
- 1.35mm
- Frequency :
- 100MHz
- Max Power Dissipation :
- 150mW
- Radiation Hardening :
- No
- Number of Elements :
- 1
- hFE Min :
- 150
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gain Bandwidth Product :
- 100MHz
- Max Collector Current :
- 100mA
- Current Rating :
- 100mA
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 45V
- Halogen Free :
- Halogen Free
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 600mV
- Transition Frequency :
- 100MHz
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Transistor Application :
- AMPLIFIER
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Max Breakdown Voltage :
- 45V
- Height :
- 900μm
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Number of Terminations :
- 3
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Datasheets
- BC847BWT1
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC847BWT1G Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 600mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (100mA).100MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BC847BWT1G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC847BWT1G Applications
There are a lot of ON Semiconductor
BC847BWT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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