BC847BW

Manufacturer :

YANGJIE

Product Category :

Transistors - Bipolar (BJT) - Single

Emitter Base Voltage (VEBO) :

6 V

Reach Compliance Code :

Compliant

Max Collector Current :

100 mA

Surface Mount :

yes

Min Operating Temperature :

-65 °C

Number of Elements :

1

REACH SVHC :

No SVHC

Polarity/Channel Type :

NPN

Subcategory :

Other Transistors

Polarity :

NPN

Power Dissipation :

200 mW

Terminal Position :

Dual

Collector Base Voltage (VCBO) :

50 V

Max Operating Temperature :

150 °C

hFE Min :

110

Package Shape :

RECTANGULAR

Number of Pins :

3

Collector Emitter Breakdown Voltage :

45 V

Number of Terminals :

3

Collector Emitter Voltage (VCEO) :

45 V

JESD-30 Code :

R-PDSO-G3

DC Current Gain-Min (hFE) :

200

Transition Frequency :

100 MHz

Ambient Temperature Range High :

150 °C

Collector Emitter Saturation Voltage :

200 mV

Qualification Status :

Not Qualified

Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Collector Current-Max (IC) :

0.1 A

RoHS :

Compliant

Transistor Element Material :

SILICON

Height :

1.1 mm

Manufacturer :

Diotec Semiconductor AG

Collector-Emitter Voltage-Max :

45 V

ECCN Code :

EAR99

Max Power Dissipation :

200 mW

Max Junction Temperature (Tj) :

150 °C

Pin Count :

3