BC847BW

Manufacturer :

Diotec Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Current-Max (IC) :

0.1 A

Subcategory :

Other Transistors

Polarity :

NPN

Configuration :

Single

Collector Emitter Voltage (VCEO) :

45 V

Transistor Element Material :

SILICON

Reach Compliance Code :

Compliant

Peak Reflow Temperature (Cel) :

260

RoHS :

Compliant

Surface Mount :

yes

Transition Frequency :

100 MHz

Max Power Dissipation :

200 mW

Min Operating Temperature :

-65 °C

Collector Emitter Breakdown Voltage :

45 V

Max Collector Current :

100 mA

DC Current Gain-Min (hFE) :

200

Number of Elements :

1

Number of Terminals :

3

Polarity/Channel Type :

NPN

Number of Pins :

3

Ambient Temperature Range High :

150 °C

JESD-30 Code :

R-PDSO-G3

REACH SVHC :

No SVHC

Emitter Base Voltage (VEBO) :

6 V

Package Shape :

RECTANGULAR

hFE Min :

110

Terminal Position :

Dual

Power Dissipation :

200 mW

Max Operating Temperature :

150 °C

Max Junction Temperature (Tj) :

150 °C

Height :

1.1 mm

ECCN Code :

EAR99

Collector-Emitter Voltage-Max :

45 V

Qualification Status :

Not Qualified

Manufacturer :

Diotec Semiconductor AG

Pin Count :

3

Terminal Form :

Gull wing

Collector Emitter Saturation Voltage :

200 mV

Collector Base Voltage (VCBO) :

50 V