BC847BW,135
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- Mfr.Part #
- BC847BW,135
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT323
- Stock
- 1,922,370
- In Stock ：
- 1,922,370
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 100MHz
- Mount :
- Surface Mount
- Package / Case :
- SC-70, SOT-323
- Operating Temperature :
- 150°C TJ
- Voltage :
- 45V
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 200mW
- Max Breakdown Voltage :
- 45V
- Transistor Type :
- NPN
- Pin Count :
- 3
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 6V
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Max Collector Current :
- 100mA
- Base Part Number :
- BC847
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Current :
- 1A
- Power Dissipation :
- 200mW
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Factory Lead Time :
- 4 Weeks
- Polarity/Channel Type :
- NPN
- Frequency :
- 100MHz
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Series :
- Automotive, AEC-Q101
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2013
- Collector Emitter Voltage (VCEO) :
- 45V
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Breakdown Voltage :
- 45V
- Datasheets
- BC847BW,135
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC847BW,135 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 100mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
BC847BW,135 Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847BW,135 Applications
There are a lot of Nexperia USA Inc.
BC847BW,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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