BC847BVC-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Length :

1.6mm

Factory Lead Time :

19 Weeks

Base Part Number :

BC847BV

Polarity :

NPN

Package / Case :

SOT-563, SOT-666

Element Configuration :

Dual

REACH SVHC :

No SVHC

Published :

2000

Terminal Form :

Flat

Peak Reflow Temperature (Cel) :

260

Collector Emitter Voltage (VCEO) :

45V

Collector Emitter Breakdown Voltage :

45V

Packaging :

Tape and Reel (TR)

Emitter Base Voltage (VEBO) :

6V

Time@Peak Reflow Temperature-Max (s) :

40

Mount :

Surface Mount

Number of Elements :

2

Transition Frequency :

100MHz

Frequency :

100MHz

Contact Plating :

Tin

Number of Pins :

6

Additional Feature :

High Reliability

Collector Emitter Saturation Voltage :

300mV

Collector Base Voltage (VCBO) :

50V

Height :

600μm

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Transistor Element Material :

SILICON

JESD-609 Code :

e3

ECCN Code :

EAR99

Radiation Hardening :

No

Power Dissipation :

150mW

Max Breakdown Voltage :

45V

Current - Collector Cutoff (Max) :

15nA ICBO

Max Collector Current :

100mA

Pin Count :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

150mW

Pbfree Code :

yes

Weight :

3.005049mg

RoHS Status :

ROHS3 Compliant

Width :

1.2mm

Number of Terminations :

6

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 100mA

Gain Bandwidth Product :

100MHz

Transistor Type :

2 NPN (Dual)

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ