BC847BV,315

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Polarity :

NPN

Emitter Base Voltage (VEBO) :

5V

Gain Bandwidth Product :

100MHz

Collector Base Voltage (VCBO) :

50V

Peak Reflow Temperature (Cel) :

260

Max Collector Current :

100mA

Published :

2010

Radiation Hardening :

No

Transistor Type :

2 NPN (Dual)

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30

Frequency :

100MHz

Package / Case :

SOT-563, SOT-666

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 100mA

Collector Emitter Breakdown Voltage :

45V

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Packaging :

Tape and Reel (TR)

Pin Count :

6

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

Contact Plating :

Tin

Collector Emitter Voltage (VCEO) :

45V

Power Dissipation :

300mW

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

BC847BV

Series :

Automotive, AEC-Q101

hFE Min :

200

Current - Collector Cutoff (Max) :

15nA ICBO

Lead Free :

Lead Free

Max Power Dissipation :

300mW

Transition Frequency :

100MHz

Number of Pins :

6

Element Configuration :

Single

Terminal Form :

Flat

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Number of Elements :

2

Factory Lead Time :

4 Weeks

Mount :

Surface Mount

Max Breakdown Voltage :

45V

RoHS Status :

ROHS3 Compliant