BC847BV,315

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Current - Collector Cutoff (Max) :

15nA ICBO

Transistor Type :

2 NPN (Dual)

Collector Emitter Voltage (VCEO) :

45V

Published :

2010

Collector Emitter Breakdown Voltage :

45V

Number of Pins :

6

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

4 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Package / Case :

SOT-563, SOT-666

Terminal Form :

Flat

Max Collector Current :

100mA

Max Breakdown Voltage :

45V

Gain Bandwidth Product :

100MHz

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Series :

Automotive, AEC-Q101

Mounting Type :

Surface Mount

Transition Frequency :

100MHz

Frequency :

100MHz

JESD-609 Code :

e3

Contact Plating :

Tin

Power Dissipation :

300mW

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 100mA

Lead Free :

Lead Free

Base Part Number :

BC847BV

Collector Base Voltage (VCBO) :

50V

Transistor Element Material :

SILICON

hFE Min :

200

Polarity :

NPN

Mount :

Surface Mount

Max Power Dissipation :

300mW

Operating Temperature :

150°C TJ

Number of Elements :

2

Emitter Base Voltage (VEBO) :

5V

Pin Count :

6