BC847BU3T106
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- Mfr.Part #
- BC847BU3T106
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A UMT3
- Stock
- 5,890
- In Stock ：
- 5,890
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Voltage - Collector Emitter Breakdown (Max) :
- 45V
- Operating Temperature :
- 150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Power - Max :
- 200mW
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Factory Lead Time :
- 13 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Mounting Type :
- Surface Mount
- Current - Collector (Ic) (Max) :
- 100mA
- Frequency - Transition :
- 200MHz
- Package / Case :
- SC-70, SOT-323
- Datasheets
- BC847BU3T106
NPN 150°C TJ 15nA ICBO SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC847BU3T106 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.A 45V maximal voltage - Collector Emitter Breakdown is present in the device.
BC847BU3T106 Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
BC847BU3T106 Applications
There are a lot of ROHM Semiconductor
BC847BU3T106 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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