BC847BT116
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- Mfr.Part #
- BC847BT116
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SST3
- Stock
- 102,500
- In Stock ：
- 102,500
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 45V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 200mW
- Number of Elements :
- 1
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 45V
- Pin Count :
- 3
- Pbfree Code :
- yes
- Transistor Application :
- AMPLIFIER
- Collector Base Voltage (VCBO) :
- 50V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- 10
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 100mA
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- Dual
- Contact Plating :
- Copper, Silver, Tin
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Published :
- 2005
- Emitter Base Voltage (VEBO) :
- 6V
- Gain Bandwidth Product :
- 200MHz
- Mounting Type :
- Surface Mount
- HTS Code :
- 8541.21.00.75
- Radiation Hardening :
- No
- Current Rating :
- 100mA
- Transition Frequency :
- 200MHz
- Mount :
- Surface Mount
- JESD-609 Code :
- e1
- Number of Pins :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Voltage - Rated DC :
- 45V
- DC Current Gain-Min (hFE) :
- 200
- Max Power Dissipation :
- 350mW
- Transistor Type :
- NPN
- Factory Lead Time :
- 13 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- hFE Min :
- 200
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 45V
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- NPN
- Datasheets
- BC847BT116
BC847BT116 Documents
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC847BT116 Overview
As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 200MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.During maximum operation, collector current can be as low as 100mA volts.
BC847BT116 Features
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 200MHz
BC847BT116 Applications
There are a lot of ROHM Semiconductor
BC847BT116 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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