BC847BS,135

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Base Part Number :

BC847BS

Element Configuration :

Dual

Emitter Base Voltage (VEBO) :

5V

Package / Case :

6-TSSOP, SC-88, SOT-363

Power - Max :

300mW

Transition Frequency :

100MHz

Factory Lead Time :

4 Weeks

Current - Collector Cutoff (Max) :

15nA ICBO

Pin Count :

6

Max Breakdown Voltage :

45V

Published :

2009

Polarity :

NPN

Voltage :

45V

Number of Terminations :

6

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 100mA

Lead Free :

Lead Free

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

50V

Gain Bandwidth Product :

100MHz

ECCN Code :

EAR99

JESD-609 Code :

e3

Contact Plating :

Tin

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

45V

Frequency :

100MHz

Max Collector Current :

100mA

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Current :

1A

Series :

Automotive, AEC-Q101

Max Power Dissipation :

300mW

Terminal Form :

Gull wing

Collector Emitter Voltage (VCEO) :

45V

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Number of Pins :

6

Operating Temperature :

150°C TJ

Power Dissipation :

400mW

Transistor Type :

2 NPN (Dual)