BC847BQAZ
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- Mfr.Part #
- BC847BQAZ
- Manufacturer
- Nexperia
- Package / Case
- 3-XDFN Exposed Pad
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A DFN1010D-3
- Stock
- 60,000
- In Stock ：
- 60,000
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 45V
- Terminal Form :
- NO LEAD
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Frequency - Transition :
- 100MHz
- Series :
- Automotive, AEC-Q101
- Factory Lead Time :
- 4 Weeks
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 100MHz
- Max Power Dissipation :
- 280mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Configuration :
- Single
- JESD-30 Code :
- R-PDSO-N3
- Published :
- 2014
- Mounting Type :
- Surface Mount
- Package / Case :
- 3-XDFN Exposed Pad
- Terminal Position :
- Dual
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 400mV
- Max Collector Current :
- 100mA
- Pin Count :
- 3
- Max Breakdown Voltage :
- 45V
- Polarity/Channel Type :
- NPN
- Case Connection :
- COLLECTOR
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Reference Standard :
- AEC-Q101; IEC-60134
- Power - Max :
- 280mW
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Transistor Element Material :
- SILICON
- Datasheets
- BC847BQAZ
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN 3-XDFN Exposed Pad Tape & Reel (TR) Surface Mount
BC847BQAZ Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 2mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC847BQAZ Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
a transition frequency of 100MHz
BC847BQAZ Applications
There are a lot of Nexperia USA Inc.
BC847BQAZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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