BC847BPDXV6T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Surface Mount :

yes

Max Collector Current :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

45V

Pbfree Code :

yes

Collector Base Voltage (VCBO) :

50V

Number of Elements :

2

Element Configuration :

Dual

Contact Plating :

Tin

Height :

600μm

Transistor Application :

AMPLIFIER

JESD-609 Code :

e3

Transition Frequency :

100MHz

Base Part Number :

BC847BPD

hFE Min :

200

Current - Collector Cutoff (Max) :

15nA ICBO

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

ECCN Code :

EAR99

Published :

2004

REACH SVHC :

No SVHC

Current Rating :

100mA

Collector Emitter Voltage (VCEO) :

45V

Package / Case :

SOT-563, SOT-666

Radiation Hardening :

No

Pin Count :

6

Halogen Free :

Halogen Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Frequency :

100MHz

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Gain Bandwidth Product :

100MHz

RoHS Status :

ROHS3 Compliant

Length :

1.7mm

Number of Terminations :

6

Lead Free :

Lead Free

Max Power Dissipation :

357mW

Collector Emitter Saturation Voltage :

600mV

Width :

1.3mm

Transistor Type :

NPN, PNP

Max Breakdown Voltage :

45V

Number of Pins :

6

Factory Lead Time :

5 Weeks

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Polarity :

NPN, PNP

Terminal Form :

Flat

Emitter Base Voltage (VEBO) :

5V

Power Dissipation :

500mW