BC847BPDW1T2G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Element Configuration :

Dual

Contact Plating :

Tin

Mounting Type :

Surface Mount

Radiation Hardening :

No

Number of Pins :

6

Packaging :

Tape and Reel (TR)

Collector Base Voltage (VCBO) :

50V

Collector Emitter Breakdown Voltage :

45V

Frequency :

100MHz

Pbfree Code :

yes

Pin Count :

6

Factory Lead Time :

8 Weeks

Collector Emitter Saturation Voltage :

-650mV

Number of Terminations :

6

Number of Elements :

2

Published :

2009

Power Dissipation :

380mW

Transition Frequency :

100MHz

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Emitter Base Voltage (VEBO) :

-5V

Halogen Free :

Halogen Free

Terminal Form :

Gull wing

Max Breakdown Voltage :

45V

ECCN Code :

EAR99

Surface Mount :

yes

Transistor Type :

NPN, PNP

Current - Collector Cutoff (Max) :

15nA ICBO

Transistor Element Material :

SILICON

Gain Bandwidth Product :

100MHz

Lead Free :

Lead Free

Package / Case :

6-TSSOP, SC-88, SOT-363

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Max Collector Current :

100mA

Base Part Number :

BC847BPD

Collector Emitter Voltage (VCEO) :

45V

Max Power Dissipation :

380mW

hFE Min :

200

Polarity :

NPN, PNP

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

JESD-609 Code :

e3

Transistor Application :

AMPLIFIER