BC847BPDW1T1G

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Mfr.Part #
BC847BPDW1T1G
Manufacturer
onsemi
Package / Case
6-TSSOP, SC-88, SOT-363
Datasheet
Download
Description
TRAN NPN/PNP 45V 0.1A SC88/SC70
Stock
29,342
In Stock :
29,342

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Arrays
Factory Lead Time :
8 Weeks
JESD-609 Code :
e3
Transistor Application :
AMPLIFIER
Collector Emitter Saturation Voltage :
600mV
Operating Temperature :
-55°C~150°C TJ
Length :
2mm
Collector Emitter Breakdown Voltage :
45V
Published :
2004
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Termination :
SMD/SMT
Gain Bandwidth Product :
100MHz
Max Collector Current :
100mA
Halogen Free :
Halogen Free
Max Power Dissipation :
380mW
Width :
1.25mm
Transition Frequency :
100MHz
Number of Pins :
6
RoHS Status :
ROHS3 Compliant
Lead Free :
Lead Free
Radiation Hardening :
No
Mounting Type :
Surface Mount
Power Dissipation :
380mW
Current - Collector Cutoff (Max) :
15nA ICBO
ECCN Code :
EAR99
Collector Base Voltage (VCBO) :
50V
Vce Saturation (Max) @ Ib, Ic :
600mV @ 5mA, 100mA
Base Part Number :
BC847BPD
Surface Mount :
yes
Max Breakdown Voltage :
45V
Contact Plating :
Tin
Number of Terminations :
6
Voltage - Rated DC :
45V
Terminal Form :
Gull wing
Number of Elements :
2
Peak Reflow Temperature (Cel) :
260
hFE Min :
150
Polarity :
NPN, PNP
Current Rating :
1A
Packaging :
Cut Tape (CT)
Collector Emitter Voltage (VCEO) :
45V
Element Configuration :
Dual
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Frequency :
100MHz
Time@Peak Reflow Temperature-Max (s) :
40
Package / Case :
6-TSSOP, SC-88, SOT-363
Transistor Element Material :
SILICON
Transistor Type :
NPN, PNP
REACH SVHC :
No SVHC
Pbfree Code :
yes
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 2mA 5V
Emitter Base Voltage (VEBO) :
5V
Output Voltage :
5V
Height :
900μm
Pin Count :
6
Introducing Transistors - Bipolar (BJT) - Arrays onsemi BC847BPDW1T1G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:6, Mounting Type:Surface Mount, Base Part Number:BC847BPD, Number of Terminations:6, Package / Case:6-TSSOP, SC-88, SOT-363, BC847BPDW1T1G pinout, BC847BPDW1T1G datasheet PDF, BC847BPDW1T1G amp .Beyond Transistors - Bipolar (BJT) - Arrays onsemi BC847BPDW1T1G ,we also offer NCV1413BDR2G, ZXTD4591E6TA, ZXTD6717E6TA, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BC847BPDW1T1G


BC847BPDW1T1G datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from ON Semiconductor stock available at

Description:
The BC847BPDW1T1G is a NPN/PNP Bipolar Transistor Array from ON Semiconductor. It is a low voltage, low current device with a maximum collector-emitter voltage of 45V and a maximum collector current of 0.1A. It is housed in a SOT363 package.

Features:
• Low voltage, low current
• Maximum collector-emitter voltage of 45V
• Maximum collector current of 0.1A
• SOT363 package

Applications:
• Switching
• Amplification
• Level shifting
• Motor control
• Power management
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