BC847BMTF
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- Mfr.Part #
- BC847BMTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 2,769
- In Stock ：
- 2,769
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- 100mA
- Weight :
- 30mg
- Base Part Number :
- BC847
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- 6V
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Max Collector Current :
- 100mA
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- 45V
- Collector Emitter Breakdown Voltage :
- 45V
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 45V
- Terminal Position :
- Dual
- Gain Bandwidth Product :
- 300MHz
- Contact Plating :
- Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 310mW
- Width :
- 1.3mm
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Height :
- 930μm
- Max Power Dissipation :
- 310mW
- Length :
- 2.92mm
- RoHS Status :
- RoHS Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 200mV
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- hFE Min :
- 110
- Transition Frequency :
- 300MHz
- Mount :
- Surface Mount
- Frequency :
- 300MHz
- Collector Base Voltage (VCBO) :
- 50V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 45V
- Datasheets
- BC847BMTF
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC847BMTF Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 100mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Input voltage breakdown is available at 45V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC847BMTF Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC847BMTF Applications
There are a lot of ON Semiconductor
BC847BMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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