BC847BMB,315
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- Mfr.Part #
- BC847BMB,315
- Manufacturer
- NXP Semiconductors
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A DFN1006B-3
- Stock
- 26,518
- In Stock ：
- 26,518
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Transition Frequency :
- 100MHz
- Radiation Hardening :
- No
- Power Dissipation :
- 250mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- Automotive, AEC-Q101
- Transistor Type :
- NPN
- Max Power Dissipation :
- 250mW
- Number of Elements :
- 1
- Base Part Number :
- BC847
- Max Collector Current :
- 100mA
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Published :
- 2011
- Collector Emitter Saturation Voltage :
- 200mV
- Factory Lead Time :
- 8 Weeks
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Package / Case :
- 3-XFDFN
- Number of Pins :
- 3
- Case Connection :
- COLLECTOR
- Element Configuration :
- Single
- Frequency :
- 100MHz
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- hFE Min :
- 200
- Packaging :
- Tape and Reel (TR)
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 45V
- Gain Bandwidth Product :
- 100MHz
- Terminal Position :
- BOTTOM
- Collector Base Voltage (VCBO) :
- 50V
- Max Breakdown Voltage :
- 45V
- Emitter Base Voltage (VEBO) :
- 6V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 45V
- Datasheets
- BC847BMB,315
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN 3-XFDFN Tape & Reel (TR) Surface Mount
BC847BMB,315 Overview
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 200mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 5mA, 100mA.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC847BMB,315 Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847BMB,315 Applications
There are a lot of Nexperia USA Inc.
BC847BMB,315 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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