BC847BMB,315
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- Mfr.Part #
- BC847BMB,315
- Manufacturer
- NXP Semiconductors
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A DFN1006B-3
- Stock
- 26,518
- In Stock ：
- 26,518
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 250mW
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 250mW
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 6V
- hFE Min :
- 200
- Element Configuration :
- Single
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Case Connection :
- COLLECTOR
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 50V
- Collector Emitter Voltage (VCEO) :
- 45V
- Factory Lead Time :
- 8 Weeks
- Gain Bandwidth Product :
- 100MHz
- Series :
- Automotive, AEC-Q101
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 100MHz
- Contact Plating :
- Tin
- Terminal Position :
- BOTTOM
- Polarity/Channel Type :
- NPN
- Collector Emitter Saturation Voltage :
- 200mV
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Max Collector Current :
- 100mA
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 45V
- Pin Count :
- 3
- Published :
- 2011
- Frequency :
- 100MHz
- Operating Temperature :
- 150°C TJ
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Base Part Number :
- BC847
- Max Breakdown Voltage :
- 45V
- Transistor Type :
- NPN
- Package / Case :
- 3-XFDFN
- Datasheets
- BC847BMB,315
BC847BMB,315 Documents
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN 3-XFDFN Tape & Reel (TR) Surface Mount
BC847BMB,315 Overview
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 200mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 5mA, 100mA.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC847BMB,315 Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847BMB,315 Applications
There are a lot of Nexperia USA Inc.
BC847BMB,315 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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