BC847BMB,315
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- Mfr.Part #
- BC847BMB,315
- Manufacturer
- Nexperia
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A DFN1006B-3
- Stock
- 26,518
- In Stock ：
- 26,518
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 200mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 100MHz
- Transistor Application :
- SWITCHING
- Package / Case :
- 3-XFDFN
- Pin Count :
- 3
- Number of Pins :
- 3
- Element Configuration :
- Single
- Base Part Number :
- BC847
- Mount :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Contact Plating :
- Tin
- Collector Base Voltage (VCBO) :
- 50V
- Radiation Hardening :
- No
- Max Collector Current :
- 100mA
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- hFE Min :
- 200
- Series :
- Automotive, AEC-Q101
- Published :
- 2011
- Collector Emitter Voltage (VCEO) :
- 45V
- Terminal Position :
- BOTTOM
- Power Dissipation :
- 250mW
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Terminations :
- 3
- Case Connection :
- COLLECTOR
- Frequency :
- 100MHz
- Max Breakdown Voltage :
- 45V
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 45V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Transition Frequency :
- 100MHz
- Transistor Type :
- NPN
- Max Power Dissipation :
- 250mW
- Factory Lead Time :
- 8 Weeks
- Number of Elements :
- 1
- Datasheets
- BC847BMB,315
BC847BMB,315 Documents
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN 3-XFDFN Tape & Reel (TR) Surface Mount
BC847BMB,315 Overview
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 200mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 5mA, 100mA.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC847BMB,315 Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847BMB,315 Applications
There are a lot of Nexperia USA Inc.
BC847BMB,315 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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