BC847BMB,315
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- Mfr.Part #
- BC847BMB,315
- Manufacturer
- Nexperia
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A DFN1006B-3
- Stock
- 26,518
- In Stock ：
- 26,518
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 100MHz
- Frequency :
- 100MHz
- Collector Base Voltage (VCBO) :
- 50V
- Max Breakdown Voltage :
- 45V
- Max Collector Current :
- 100mA
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- hFE Min :
- 200
- Published :
- 2011
- Transistor Type :
- NPN
- Max Power Dissipation :
- 250mW
- Power Dissipation :
- 250mW
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Series :
- Automotive, AEC-Q101
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 200mV
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- BOTTOM
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Contact Plating :
- Tin
- Package / Case :
- 3-XFDFN
- Number of Elements :
- 1
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 45V
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 45V
- Factory Lead Time :
- 8 Weeks
- Transistor Application :
- SWITCHING
- Case Connection :
- COLLECTOR
- Base Part Number :
- BC847
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Transition Frequency :
- 100MHz
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Emitter Base Voltage (VEBO) :
- 6V
- Datasheets
- BC847BMB,315
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN 3-XFDFN Tape & Reel (TR) Surface Mount
BC847BMB,315 Overview
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 200mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 5mA, 100mA.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC847BMB,315 Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847BMB,315 Applications
There are a lot of Nexperia USA Inc.
BC847BMB,315 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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