BC847BM3T5G

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Mfr.Part #
BC847BM3T5G
Manufacturer
onsemi
Package / Case
SOT-723
Datasheet
Download
Description
TRANS NPN 45V 0.1A SOT723
Stock
100,524
In Stock :
100,524

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Application :
AMPLIFIER
Current - Collector Cutoff (Max) :
15nA ICBO
ECCN Code :
EAR99
Polarity/Channel Type :
NPN
Collector Emitter Voltage (VCEO) :
45V
Base Part Number :
BC847BM
RoHS Status :
ROHS3 Compliant
Vce Saturation (Max) @ Ib, Ic :
600mV @ 5mA, 100mA
Pin Count :
3
Terminal Form :
Flat
Peak Reflow Temperature (Cel) :
260
Height :
550μm
Emitter Base Voltage (VEBO) :
6V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Breakdown Voltage :
45V
Width :
850μm
Radiation Hardening :
No
Factory Lead Time :
2 Weeks
Power Dissipation :
600mW
Number of Terminations :
3
Contact Plating :
Tin
Collector Base Voltage (VCBO) :
50V
Transistor Element Material :
SILICON
Package / Case :
SOT-723
Max Power Dissipation :
260mW
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 2mA 5V
Terminal Position :
Dual
Number of Elements :
1
Collector Emitter Breakdown Voltage :
45V
Frequency :
100MHz
Surface Mount :
yes
Transition Frequency :
100MHz
Max Collector Current :
100mA
Pbfree Code :
yes
Number of Pins :
3
JESD-609 Code :
e3
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Published :
2005
Packaging :
Tape and Reel (TR)
Gain Bandwidth Product :
100MHz
Lead Free :
Lead Free
Mounting Type :
Surface Mount
Collector Emitter Saturation Voltage :
600mV
Time@Peak Reflow Temperature-Max (s) :
40
Element Configuration :
Single
Operating Temperature :
-55°C~150°C TJ
Transistor Type :
NPN
Power - Max :
260mW
Length :
1.25mm
REACH SVHC :
No SVHC
Datasheets
BC847BM3T5G
Introducing Transistors - Bipolar (BJT) - Single onsemi BC847BM3T5G from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:BC847BM, Number of Terminations:3, Package / Case:SOT-723, Number of Pins:3, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, BC847BM3T5G pinout, BC847BM3T5G datasheet PDF, BC847BM3T5G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BC847BM3T5G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BC847BM3T5G


NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-723 Tape & Reel (TR) Surface Mount

BC847BM3T5G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 600mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 100mA.The emitter base voltage can be kept at 6V for high efficiency.The part has a transition frequency of 100MHz.The breakdown input voltage is 45V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.

BC847BM3T5G Features


the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz


BC847BM3T5G Applications


There are a lot of ON Semiconductor
BC847BM3T5G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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