BC847BLT3G
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- Mfr.Part #
- BC847BLT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 144,610
- In Stock ：
- 144,610
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2007
- Max Breakdown Voltage :
- 45V
- hFE Min :
- 200
- Halogen Free :
- Halogen Free
- Gain Bandwidth Product :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 6V
- Transition Frequency :
- 100MHz
- Max Power Dissipation :
- 300mW
- Collector Emitter Voltage (VCEO) :
- 45V
- Current Rating :
- 100mA
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Surface Mount :
- yes
- Max Collector Current :
- 100mA
- Collector Emitter Saturation Voltage :
- 600mV
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- 45V
- Length :
- 2.9mm
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Pin Count :
- 3
- Transistor Type :
- NPN
- Frequency :
- 100MHz
- Collector Base Voltage (VCBO) :
- 50V
- Collector Emitter Breakdown Voltage :
- 45V
- Power Dissipation :
- 300mW
- Element Configuration :
- Single
- Factory Lead Time :
- 4 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Number of Terminations :
- 3
- Height :
- 940μm
- Width :
- 1.3mm
- Terminal Finish :
- Tin (Sn)
- REACH SVHC :
- No SVHC
- Datasheets
- BC847BLT3G
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC847BLT3G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 5V.The collector emitter saturation voltage is 600mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.In the part, the transition frequency is 100MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BC847BLT3G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC847BLT3G Applications
There are a lot of ON Semiconductor
BC847BLT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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