BC847BLT3G
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- Mfr.Part #
- BC847BLT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 144,610
- In Stock ：
- 144,610
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Halogen Free :
- Halogen Free
- Published :
- 2007
- Factory Lead Time :
- 4 Weeks
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 45V
- Collector Emitter Saturation Voltage :
- 600mV
- Emitter Base Voltage (VEBO) :
- 6V
- Lead Free :
- Lead Free
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Elements :
- 1
- Frequency :
- 100MHz
- Pbfree Code :
- yes
- Max Breakdown Voltage :
- 45V
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- yes
- Terminal Form :
- Gull wing
- Gain Bandwidth Product :
- 100MHz
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Terminal Position :
- Dual
- Pin Count :
- 3
- Transition Frequency :
- 100MHz
- Terminal Finish :
- Tin (Sn)
- Voltage - Rated DC :
- 45V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 300mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Max Power Dissipation :
- 300mW
- Collector Base Voltage (VCBO) :
- 50V
- Height :
- 940μm
- Peak Reflow Temperature (Cel) :
- 260
- Length :
- 2.9mm
- JESD-609 Code :
- e3
- Max Collector Current :
- 100mA
- ECCN Code :
- EAR99
- Width :
- 1.3mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Collector Emitter Breakdown Voltage :
- 45V
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Current Rating :
- 100mA
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- hFE Min :
- 200
- Datasheets
- BC847BLT3G
BC847BLT3G Documents
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC847BLT3G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 5V.The collector emitter saturation voltage is 600mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.In the part, the transition frequency is 100MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BC847BLT3G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC847BLT3G Applications
There are a lot of ON Semiconductor
BC847BLT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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