BC847BLT3
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- Mfr.Part #
- BC847BLT3
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 43,494
- In Stock ：
- 43,494
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- RoHS Status :
- ROHS3 Compliant
- Length :
- 2.9mm
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 100MHz
- Pin Count :
- 3
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 600mV
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Voltage - Rated DC :
- 45V
- Collector Emitter Voltage (VCEO) :
- 45V
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 300mW
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 50V
- Transistor Type :
- NPN
- Operating Temperature :
- -55°C~150°C TJ
- Gain Bandwidth Product :
- 100MHz
- Terminal Form :
- Gull wing
- Published :
- 2007
- Factory Lead Time :
- 4 Weeks
- Frequency :
- 100MHz
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 6V
- Surface Mount :
- yes
- Max Collector Current :
- 100mA
- Current Rating :
- 100mA
- Width :
- 1.3mm
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 45V
- Element Configuration :
- Single
- Height :
- 940μm
- Power Dissipation :
- 300mW
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Terminal Finish :
- Tin (Sn)
- Max Breakdown Voltage :
- 45V
- hFE Min :
- 200
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Halogen Free :
- Halogen Free
- Polarity/Channel Type :
- NPN
- REACH SVHC :
- No SVHC
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Datasheets
- BC847BLT3
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC847BLT3G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 5V.The collector emitter saturation voltage is 600mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.In the part, the transition frequency is 100MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BC847BLT3G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC847BLT3G Applications
There are a lot of ON Semiconductor
BC847BLT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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