BC847BLT1G
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- Mfr.Part #
- BC847BLT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 34,879
- In Stock ：
- 34,879
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- hFE Min :
- 200
- Terminal Position :
- Dual
- Surface Mount :
- yes
- Packaging :
- Cut Tape (CT)
- Number of Pins :
- 3
- Max Collector Current :
- 100mA
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 45V
- Max Power Dissipation :
- 300mW
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 6V
- Voltage - Rated DC :
- 45V
- Collector Emitter Saturation Voltage :
- 600mV
- Height :
- 1.016mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 1.397mm
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Halogen Free :
- Halogen Free
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Gain Bandwidth Product :
- 100MHz
- Transistor Element Material :
- SILICON
- Current Rating :
- 100mA
- Terminal Form :
- Gull wing
- Frequency :
- 100MHz
- Pbfree Code :
- yes
- Power Dissipation :
- 300mW
- Transition Frequency :
- 100MHz
- Max Breakdown Voltage :
- 45V
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 50V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- REACH SVHC :
- No SVHC
- Pin Count :
- 3
- Published :
- 2005
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Collector Emitter Voltage (VCEO) :
- 45V
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Factory Lead Time :
- 4 Weeks
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Length :
- 3.0226mm
- Type :
- GENERAL PURPOSE
- Transistor Type :
- NPN
- Datasheets
- BC847BLT1G
BC847BLT1G Documents
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC847BLT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.During maximum operation, collector current can be as low as 100mA volts.
BC847BLT1G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC847BLT1G Applications
There are a lot of ON Semiconductor
BC847BLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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