BC847BLT1G
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- Mfr.Part #
- BC847BLT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 34,879
- In Stock ：
- 34,879
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Number of Pins :
- 3
- Transistor Type :
- NPN
- REACH SVHC :
- No SVHC
- Halogen Free :
- Halogen Free
- Collector Emitter Breakdown Voltage :
- 45V
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Collector Emitter Saturation Voltage :
- 600mV
- JESD-609 Code :
- e3
- Contact Plating :
- Tin
- Max Power Dissipation :
- 300mW
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Number of Terminations :
- 3
- Max Collector Current :
- 100mA
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Transition Frequency :
- 100MHz
- Max Breakdown Voltage :
- 45V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 4 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Packaging :
- Cut Tape (CT)
- Surface Mount :
- yes
- Gain Bandwidth Product :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 6V
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 200
- Length :
- 3.0226mm
- Collector Emitter Voltage (VCEO) :
- 45V
- Current Rating :
- 100mA
- Width :
- 1.397mm
- Frequency :
- 100MHz
- Element Configuration :
- Single
- Height :
- 1.016mm
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Type :
- GENERAL PURPOSE
- Voltage - Rated DC :
- 45V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Power Dissipation :
- 300mW
- Published :
- 2005
- Collector Base Voltage (VCBO) :
- 50V
- Datasheets
- BC847BLT1G
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC847BLT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.During maximum operation, collector current can be as low as 100mA volts.
BC847BLT1G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC847BLT1G Applications
There are a lot of ON Semiconductor
BC847BLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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