BC847BLP4-7B
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- Mfr.Part #
- BC847BLP4-7B
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A 3DFN
- Stock
- 15,256
- In Stock ：
- 15,256
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 45V
- Case Connection :
- COLLECTOR
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 250mW
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Collector Emitter Breakdown Voltage :
- 45V
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 6V
- Max Breakdown Voltage :
- 45V
- Element Configuration :
- Single
- Published :
- 2011
- Max Collector Current :
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Pin Count :
- 3
- Transition Frequency :
- 100MHz
- Gain Bandwidth Product :
- 100MHz
- REACH SVHC :
- No SVHC
- Base Part Number :
- BC847
- Transistor Type :
- NPN
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Package / Case :
- 3-XFDFN
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Continuous Collector Current :
- 100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 15 Weeks
- Terminal Position :
- BOTTOM
- JESD-609 Code :
- e4
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 50V
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 600mV
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Datasheets
- BC847BLP4-7B
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN 3-XFDFN Tape & Reel (TR) Surface Mount
BC847BLP4-7B Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 600mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 100mA.Single BJT transistor is recommended to keep the continuous collector voltage at 100mA in order to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.The part has a transition frequency of 100MHz.The breakdown input voltage is 45V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC847BLP4-7B Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847BLP4-7B Applications
There are a lot of Diodes Incorporated
BC847BLP4-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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