BC847BLP4-7
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- Mfr.Part #
- BC847BLP4-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A 3DFN
- Stock
- 8,149
- In Stock ：
- 8,149
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 600mV
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 100mA
- Power Dissipation :
- 250mW
- Collector Base Voltage (VCBO) :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Terminal Form :
- NO LEAD
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- BOTTOM
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Qualification Status :
- Not Qualified
- Transition Frequency :
- 100MHz
- Published :
- 2011
- Gain Bandwidth Product :
- 100MHz
- Frequency :
- 100MHz
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 45V
- Package / Case :
- 3-XFDFN
- Max Power Dissipation :
- 250mW
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Length :
- 1mm
- Case Connection :
- COLLECTOR
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 45V
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Height :
- 350μm
- Max Breakdown Voltage :
- 45V
- JESD-609 Code :
- e4
- Factory Lead Time :
- 15 Weeks
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Surface Mount
- Base Part Number :
- BC847
- Width :
- 600μm
- Packaging :
- Tape and Reel (TR)
- Contact Plating :
- Gold
- Datasheets
- BC847BLP4-7
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN 3-XFDFN Tape & Reel (TR) Surface Mount
BC847BLP4-7 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 600mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 100mA.The emitter base voltage can be kept at 6V for high efficiency.The part has a transition frequency of 100MHz.The breakdown input voltage is 45V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC847BLP4-7 Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847BLP4-7 Applications
There are a lot of Diodes Incorporated
BC847BLP4-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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