BC847BLP-7B
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- Mfr.Part #
- BC847BLP-7B
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-UFDFN
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A 3DFN
- Stock
- 5,468
- In Stock ：
- 5,468
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 45V
- Polarity/Channel Type :
- NPN
- Max Breakdown Voltage :
- 45V
- Number of Elements :
- 1
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 45V
- Case Connection :
- COLLECTOR
- Max Collector Current :
- 100mA
- Terminal Form :
- NO LEAD
- Gain Bandwidth Product :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- 3-UFDFN
- Peak Reflow Temperature (Cel) :
- 260
- Qualification Status :
- Not Qualified
- Additional Feature :
- High Reliability
- Factory Lead Time :
- 15 Weeks
- Transistor Type :
- NPN
- Base Part Number :
- BC847
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Max Power Dissipation :
- 250mW
- Contact Plating :
- Gold
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Saturation Voltage :
- 600mV
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Terminal Position :
- BOTTOM
- Collector Base Voltage (VCBO) :
- 50V
- Transition Frequency :
- 100MHz
- Mounting Type :
- Surface Mount
- Published :
- 2000
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Continuous Collector Current :
- 100mA
- JESD-609 Code :
- e4
- Emitter Base Voltage (VEBO) :
- 6V
- Datasheets
- BC847BLP-7B
BC847BLP-7B Documents
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN 3-UFDFN Tape & Reel (TR) Surface Mount
BC847BLP-7B Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.A 100mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 45V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC847BLP-7B Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847BLP-7B Applications
There are a lot of Diodes Incorporated
BC847BLP-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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