BC847BLP-7
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- Mfr.Part #
- BC847BLP-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-UFDFN
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A 3DFN
- Stock
- 8,354
- In Stock ：
- 8,354
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Factory Lead Time :
- 19 Weeks
- Contact Plating :
- Gold
- Power Dissipation :
- 250mW
- Lead Free :
- Lead Free
- Case Connection :
- COLLECTOR
- Frequency :
- 100MHz
- Max Power Dissipation :
- 250mW
- Collector Emitter Voltage (VCEO) :
- 45V
- Collector Emitter Breakdown Voltage :
- 45V
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 45V
- Number of Elements :
- 1
- Pbfree Code :
- yes
- JESD-609 Code :
- e4
- Gain Bandwidth Product :
- 100MHz
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Additional Feature :
- High Reliability
- Collector Emitter Saturation Voltage :
- 600mV
- Height :
- 1.5mm
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Max Collector Current :
- 100mA
- Transistor Type :
- NPN
- REACH SVHC :
- No SVHC
- Terminal Position :
- BOTTOM
- Length :
- 1mm
- Width :
- 600μm
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 50V
- Package / Case :
- 3-UFDFN
- Transition Frequency :
- 100MHz
- Mounting Type :
- Surface Mount
- Base Part Number :
- BC847
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Current Rating :
- 100mA
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Max Breakdown Voltage :
- 45V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 6V
- Polarity/Channel Type :
- NPN
- Mount :
- Surface Mount
- Published :
- 2011
- Datasheets
- BC847BLP-7
BC847BLP-7 Documents
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN 3-UFDFN Tape & Reel (TR) Surface Mount
BC847BLP-7 Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 100mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 45V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC847BLP-7 Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC847BLP-7 Applications
There are a lot of Diodes Incorporated
BC847BLP-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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