BC847BLD-7
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- Mfr.Part #
- BC847BLD-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.2A SOT23-3
- Stock
- 32,567
- In Stock ：
- 32,567
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 200.998119mg
- Transition Frequency :
- 100MHz
- Polarity/Channel Type :
- NPN
- hFE Min :
- 180
- Collector Emitter Voltage (VCEO) :
- 45V
- Published :
- 2008
- Length :
- 3.05mm
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 45V
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- Pbfree Code :
- yes
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 100MHz
- Power Dissipation :
- 300mW
- Base Part Number :
- BC847
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Pins :
- 3
- Terminal Position :
- Dual
- Height :
- 1mm
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 10mA 5V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Max Collector Current :
- 200mA
- Collector Base Voltage (VCBO) :
- 50V
- Number of Elements :
- 1
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Frequency :
- 100MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 1.4mm
- Operating Temperature :
- -55°C~150°C TJ
- Max Power Dissipation :
- 300mW
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 50nA
- Terminal Finish :
- Matte Tin (Sn)
- Datasheets
- BC847BLD-7
BC847BLD-7 Documents
NPN -55°C~150°C TJ 50nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC847BLD-7 Overview
In this device, the DC current gain is 150 @ 10mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
BC847BLD-7 Features
the DC current gain for this device is 150 @ 10mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847BLD-7 Applications
There are a lot of Diodes Incorporated
BC847BLD-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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