BC847BFZ-7B
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- Mfr.Part #
- BC847BFZ-7B
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A 3DFN
- Stock
- 21,216
- In Stock ：
- 21,216
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Frequency - Transition :
- 100MHz
- Transition Frequency :
- 180MHz
- Max Power Dissipation :
- 435mW
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Max Breakdown Voltage :
- 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Package / Case :
- 3-XFDFN
- Collector Emitter Breakdown Voltage :
- 45V
- Max Collector Current :
- 100mA
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Continuous Collector Current :
- 100mA
- JESD-609 Code :
- e4
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 100mA
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Base Voltage (VCBO) :
- 50V
- Terminal Form :
- NO LEAD
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Published :
- 2008
- Gain Bandwidth Product :
- 300MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- BOTTOM
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 200mV
- Factory Lead Time :
- 6 Weeks
- Collector Emitter Voltage (VCEO) :
- 300mV
- Current - Collector Cutoff (Max) :
- 15nA
- hFE Min :
- 200
- Case Connection :
- COLLECTOR
- Datasheets
- BC847BFZ-7B
BC847BFZ-7B Documents
NPN -55°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN 3-XFDFN Tape & Reel (TR) Surface Mount
BC847BFZ-7B Overview
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 200mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 5mA, 100mA.Single BJT transistor is essential to maintain the continuous collector voltage at 100mA to achieve high efficiency.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 180MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC847BFZ-7B Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 300mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 180MHz
BC847BFZ-7B Applications
There are a lot of Diodes Incorporated
BC847BFZ-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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