BC847BFA-7B

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Mfr.Part #
BC847BFA-7B
Manufacturer
Diodes Incorporated
Package / Case
3-XFDFN
Datasheet
Download
Description
TRANS NPN 45V 0.1A X2-DFN0806-3
Stock
36,992
In Stock :
36,992

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Operating Temperature :
-55°C~150°C TJ
Width :
850μm
Current - Collector Cutoff (Max) :
15nA ICBO
Time@Peak Reflow Temperature-Max (s) :
30
Terminal Form :
NO LEAD
hFE Min :
200
RoHS Status :
ROHS3 Compliant
REACH SVHC :
No SVHC
Emitter Base Voltage (VEBO) :
6V
Mount :
Surface Mount
Factory Lead Time :
15 Weeks
Gain Bandwidth Product :
170MHz
Published :
2013
Length :
650μm
Max Breakdown Voltage :
45V
Number of Pins :
3
Case Connection :
COLLECTOR
Max Power Dissipation :
435mW
Max Junction Temperature (Tj) :
150°C
Element Configuration :
Single
Transition Frequency :
170MHz
Collector Base Voltage (VCBO) :
50V
Additional Feature :
High Reliability
Vce Saturation (Max) @ Ib, Ic :
300mV @ 5mA, 100mA
Number of Terminations :
3
Collector Emitter Saturation Voltage :
122mV
Peak Reflow Temperature (Cel) :
260
Transistor Type :
NPN
Lead Free :
Lead Free
JESD-609 Code :
e4
Height :
400μm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Mounting Type :
Surface Mount
Contact Plating :
Gold
Polarity/Channel Type :
NPN
Number of Elements :
1
Power Dissipation :
435mW
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 2mA 5V
Collector Emitter Voltage (VCEO) :
45V
Packaging :
Tape and Reel (TR)
ECCN Code :
EAR99
Max Collector Current :
100mA
Package / Case :
3-XFDFN
Collector Emitter Breakdown Voltage :
150V
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated BC847BFA-7B from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Number of Terminations:3, Mounting Type:Surface Mount, Package / Case:3-XFDFN, BC847BFA-7B pinout, BC847BFA-7B datasheet PDF, BC847BFA-7B amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated BC847BFA-7B ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated BC847BFA-7B


NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN 3-XFDFN Tape & Reel (TR) Surface Mount

BC847BFA-7B Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 5V.The collector emitter saturation voltage is 122mV, which allows for maximum design flexibility.When VCE saturation is 300mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 170MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.

BC847BFA-7B Features


the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 122mV
the vce saturation(Max) is 300mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 170MHz


BC847BFA-7B Applications


There are a lot of Diodes Incorporated
BC847BFA-7B applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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