BC847BFA-7B
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- Mfr.Part #
- BC847BFA-7B
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A X2-DFN0806-3
- Stock
- 36,992
- In Stock ：
- 36,992
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Power Dissipation :
- 435mW
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Transistor Type :
- NPN
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 122mV
- Max Breakdown Voltage :
- 45V
- Factory Lead Time :
- 15 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2013
- REACH SVHC :
- No SVHC
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 45V
- Contact Plating :
- Gold
- Max Collector Current :
- 100mA
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- Package / Case :
- 3-XFDFN
- Additional Feature :
- High Reliability
- Max Junction Temperature (Tj) :
- 150°C
- Lead Free :
- Lead Free
- Transition Frequency :
- 170MHz
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 150V
- JESD-609 Code :
- e4
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 170MHz
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Length :
- 650μm
- hFE Min :
- 200
- Terminal Form :
- NO LEAD
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 100mA
- Element Configuration :
- Single
- Width :
- 850μm
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Height :
- 400μm
- Max Power Dissipation :
- 435mW
- Emitter Base Voltage (VEBO) :
- 6V
- Datasheets
- BC847BFA-7B
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN 3-XFDFN Tape & Reel (TR) Surface Mount
BC847BFA-7B Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 5V.The collector emitter saturation voltage is 122mV, which allows for maximum design flexibility.When VCE saturation is 300mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 170MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BC847BFA-7B Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 122mV
the vce saturation(Max) is 300mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 170MHz
BC847BFA-7B Applications
There are a lot of Diodes Incorporated
BC847BFA-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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