BC847BE6327HTSA1
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- Mfr.Part #
- BC847BE6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23
- Stock
- 216,708
- In Stock ：
- 216,708
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- 100mA
- Max Collector Current :
- 100mA
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- Published :
- 2011
- Transition Frequency :
- 250MHz
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 600mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Polarity/Channel Type :
- NPN
- Collector Emitter Saturation Voltage :
- 200mV
- Power Dissipation :
- 330mW
- Width :
- 1.3mm
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 250MHz
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Frequency :
- 250MHz
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Length :
- 2.9mm
- Terminal Form :
- Gull wing
- Base Part Number :
- BC847
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 45V
- Max Breakdown Voltage :
- 45V
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- hFE Min :
- 110
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 4 Weeks
- Terminal Position :
- Dual
- Height :
- 900μm
- Lead Free :
- Lead Free
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 45V
- Current :
- 200mA
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- 50V
- Max Power Dissipation :
- 330mW
- Emitter Base Voltage (VEBO) :
- 6V
- Datasheets
- BC847BE6327HTSA1
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC847BE6327HTSA1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 5V.With a collector emitter saturation voltage of 200mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 100mA.A transition frequency of 250MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
BC847BE6327HTSA1 Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 250MHz
BC847BE6327HTSA1 Applications
There are a lot of Infineon Technologies
BC847BE6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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