BC847BDW1T3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Halogen Free :

Halogen Free

Current - Collector Cutoff (Max) :

15nA ICBO

REACH SVHC :

No SVHC

Element Configuration :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Transistor Element Material :

SILICON

Power Dissipation :

380mW

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Gull wing

ECCN Code :

EAR99

Transition Frequency :

100MHz

Height :

950μm

Base Part Number :

BC847BD

Emitter Base Voltage (VEBO) :

6V

Transistor Type :

2 NPN (Dual)

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Voltage - Rated DC :

45V

Max Power Dissipation :

380mW

Surface Mount :

yes

Width :

1.25mm

Max Collector Current :

100mA

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

2

Published :

2004

Pin Count :

6

Mounting Type :

Surface Mount

Number of Pins :

6

Current Rating :

100mA

Collector Base Voltage (VCBO) :

50V

Transistor Application :

AMPLIFIER

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Max Breakdown Voltage :

45V

Frequency :

100MHz

Pbfree Code :

yes

Contact Plating :

Tin

Package / Case :

6-TSSOP, SC-88, SOT-363

Number of Terminations :

6

Collector Emitter Breakdown Voltage :

45V

Collector Emitter Saturation Voltage :

600mV

Gain Bandwidth Product :

100MHz

Length :

2mm

Polarity :

NPN

Collector Emitter Voltage (VCEO) :

45V

hFE Min :

200

Factory Lead Time :

8 Weeks