BC847BDW1T3

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Number of Terminations :

6

Power Dissipation :

380mW

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Contact Plating :

Tin

Polarity :

NPN

Max Power Dissipation :

380mW

Collector Emitter Breakdown Voltage :

45V

Collector Base Voltage (VCBO) :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

hFE Min :

200

Max Breakdown Voltage :

45V

Transistor Type :

2 NPN (Dual)

Length :

2mm

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Transition Frequency :

100MHz

Transistor Element Material :

SILICON

Pin Count :

6

ECCN Code :

EAR99

Surface Mount :

yes

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Mounting Type :

Surface Mount

Height :

950μm

Element Configuration :

Dual

Radiation Hardening :

No

Factory Lead Time :

8 Weeks

Voltage - Rated DC :

45V

Pbfree Code :

yes

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

6V

Collector Emitter Voltage (VCEO) :

45V

Current Rating :

100mA

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2004

Package / Case :

6-TSSOP, SC-88, SOT-363

Gain Bandwidth Product :

100MHz

Frequency :

100MHz

Collector Emitter Saturation Voltage :

600mV

Operating Temperature :

-55°C~150°C TJ

Halogen Free :

Halogen Free

Max Collector Current :

100mA

Base Part Number :

BC847BD

Packaging :

Tape and Reel (TR)

Width :

1.25mm

Current - Collector Cutoff (Max) :

15nA ICBO

Transistor Application :

AMPLIFIER

Number of Pins :

6