BC847BDW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Breakdown Voltage :

45V

Max Power Dissipation :

380mW

Pbfree Code :

yes

Element Configuration :

Dual

Height :

900μm

Lifecycle Status :

ACTIVE (Last Updated: 15 hours ago)

Transistor Type :

2 NPN (Dual)

Factory Lead Time :

8 Weeks

Contact Plating :

Tin

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

380mW

Width :

1.25mm

Frequency :

100MHz

Package / Case :

6-TSSOP, SC-88, SOT-363

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Polarity :

NPN

Collector Emitter Voltage (VCEO) :

45V

Transistor Element Material :

SILICON

Radiation Hardening :

No

Number of Pins :

6

Collector Emitter Breakdown Voltage :

45V

RoHS Status :

ROHS3 Compliant

Current Rating :

100mA

hFE Min :

200

Current - Collector Cutoff (Max) :

15nA ICBO

Collector Base Voltage (VCBO) :

50V

Base Part Number :

BC847BD

Transistor Application :

AMPLIFIER

Voltage - Rated DC :

45V

Number of Elements :

2

Length :

2mm

Time@Peak Reflow Temperature-Max (s) :

40

Surface Mount :

yes

Pin Count :

6

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

JESD-609 Code :

e3

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

6V

Gain Bandwidth Product :

100MHz

Collector Emitter Saturation Voltage :

600mV

Transition Frequency :

100MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Max Collector Current :

100mA

Published :

2004

ECCN Code :

EAR99

Halogen Free :

Halogen Free

Packaging :

Cut Tape (CT)