BC847BDW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Number of Pins :

6

Factory Lead Time :

8 Weeks

Width :

1.25mm

Polarity :

NPN

Element Configuration :

Dual

Current - Collector Cutoff (Max) :

15nA ICBO

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Transition Frequency :

100MHz

Transistor Element Material :

SILICON

Pbfree Code :

yes

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Collector Base Voltage (VCBO) :

50V

Time@Peak Reflow Temperature-Max (s) :

40

Gain Bandwidth Product :

100MHz

Packaging :

Cut Tape (CT)

Lifecycle Status :

ACTIVE (Last Updated: 15 hours ago)

Voltage - Rated DC :

45V

Number of Elements :

2

Emitter Base Voltage (VEBO) :

6V

Max Breakdown Voltage :

45V

Collector Emitter Saturation Voltage :

600mV

Terminal Form :

Gull wing

Radiation Hardening :

No

Power Dissipation :

380mW

Contact Plating :

Tin

Length :

2mm

Max Collector Current :

100mA

Pin Count :

6

hFE Min :

200

Number of Terminations :

6

Peak Reflow Temperature (Cel) :

260

Frequency :

100MHz

Collector Emitter Voltage (VCEO) :

45V

Height :

900μm

Package / Case :

6-TSSOP, SC-88, SOT-363

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

380mW

JESD-609 Code :

e3

Transistor Type :

2 NPN (Dual)

Current Rating :

100mA

Transistor Application :

AMPLIFIER

Published :

2004

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Base Part Number :

BC847BD

Collector Emitter Breakdown Voltage :

45V

ECCN Code :

EAR99

Halogen Free :

Halogen Free

Surface Mount :

yes