BC847BDW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Collector Emitter Voltage (VCEO) :

45V

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

15nA ICBO

Lifecycle Status :

ACTIVE (Last Updated: 15 hours ago)

Number of Pins :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency :

100MHz

Halogen Free :

Halogen Free

Transistor Application :

AMPLIFIER

Collector Emitter Saturation Voltage :

600mV

Max Power Dissipation :

380mW

ECCN Code :

EAR99

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Pin Count :

6

Width :

1.25mm

Power Dissipation :

380mW

Surface Mount :

yes

Packaging :

Cut Tape (CT)

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Contact Plating :

Tin

Pbfree Code :

yes

Factory Lead Time :

8 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

JESD-609 Code :

e3

Number of Terminations :

6

Voltage - Rated DC :

45V

Emitter Base Voltage (VEBO) :

6V

hFE Min :

200

Current Rating :

100mA

Element Configuration :

Dual

Collector Emitter Breakdown Voltage :

45V

Transition Frequency :

100MHz

Height :

900μm

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Collector Base Voltage (VCBO) :

50V

Lead Free :

Lead Free

Max Collector Current :

100mA

Max Breakdown Voltage :

45V

Length :

2mm

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Type :

2 NPN (Dual)

Operating Temperature :

-55°C~150°C TJ

Gain Bandwidth Product :

100MHz

Peak Reflow Temperature (Cel) :

260

Package / Case :

6-TSSOP, SC-88, SOT-363

Base Part Number :

BC847BD

Published :

2004

Polarity :

NPN

Number of Elements :

2

Transistor Element Material :

SILICON