BC847B
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- Mfr.Part #
- BC847B
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- BJT SOT-23 45V 100MA
- Stock
- 18,927
- In Stock ：
- 18,927
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 1.1mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Frequency :
- 300MHz
- Current - Collector Cutoff (Max) :
- 15nA
- Width :
- 1.4mm
- Transition Frequency :
- 300MHz
- Operating Temperature :
- -65°C~150°C TJ
- Pbfree Code :
- yes
- Max Collector Current :
- 200mA
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Max Breakdown Voltage :
- 45V
- Terminal Position :
- Dual
- Additional Feature :
- High Reliability
- Factory Lead Time :
- 19 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Max Junction Temperature (Tj) :
- 150°C
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 45V
- Emitter Base Voltage (VEBO) :
- 6V
- Current - Collector (Ic) (Max) :
- 100mA
- Transistor Type :
- NPN
- Length :
- 3.05mm
- Pin Count :
- 3
- Base Part Number :
- BC847
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Base Voltage (VCBO) :
- 50V
- Collector Emitter Voltage (VCEO) :
- 45V
- Mount :
- Surface Mount
- Published :
- 2012
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 300MHz
- Max Power Dissipation :
- 300mW
- Power Dissipation :
- 310mW
- Number of Elements :
- 1
- Number of Pins :
- 3
- Weight :
- 7.994566mg
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Collector Emitter Saturation Voltage :
- 90mV
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- hFE Min :
- 200
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Not Qualified
- Datasheets
- BC847B
NPN -65°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC847B-7-F Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 5V.The collector emitter saturation voltage is 90mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 300MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 200mA volts can be achieved.
BC847B-7-F Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 90mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
BC847B-7-F Applications
There are a lot of Diodes Incorporated
BC847B-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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