BC847B
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- Mfr.Part #
- BC847B
- Manufacturer
- MDD
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23
- Stock
- 33,894
- In Stock ：
- 33,894
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- Manufacturer :
- MDD
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 45V
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- hFE Min :
- 200
- JESD-609 Code :
- e3
- Weight :
- 7.994566mg
- Transistor Type :
- NPN
- Mount :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Collector Cutoff (Max) :
- 15nA
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 45V
- Pbfree Code :
- yes
- Current - Collector (Ic) (Max) :
- 100mA
- Factory Lead Time :
- 19 Weeks
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Max Junction Temperature (Tj) :
- 150°C
- Lead Free :
- Lead Free
- Width :
- 1.4mm
- Operating Temperature :
- -65°C~150°C TJ
- Power Dissipation :
- 310mW
- Qualification Status :
- Not Qualified
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 300mW
- Max Collector Current :
- 200mA
- Transition Frequency :
- 300MHz
- Contact Plating :
- Tin
- Element Configuration :
- Single
- Length :
- 3.05mm
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Breakdown Voltage :
- 45V
- Published :
- 2012
- Collector Base Voltage (VCBO) :
- 50V
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Gain Bandwidth Product :
- 300MHz
- Number of Elements :
- 1
- Additional Feature :
- High Reliability
- Height :
- 1.1mm
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Collector Emitter Saturation Voltage :
- 90mV
- Base Part Number :
- BC847
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Frequency :
- 300MHz
- Polarity/Channel Type :
- NPN
- Datasheets
- BC847B
NPN -65°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC847B-7-F Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 5V.The collector emitter saturation voltage is 90mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 300MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 200mA volts can be achieved.
BC847B-7-F Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 90mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
BC847B-7-F Applications
There are a lot of Diodes Incorporated
BC847B-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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