BC847B

Manufacturer :

MDD

Product Category :

Transistors - Bipolar (BJT) - Single

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

45V

Collector Emitter Breakdown Voltage :

45V

Terminal Position :

Dual

Transistor Element Material :

SILICON

Emitter Base Voltage (VEBO) :

6V

Polarity/Channel Type :

NPN

Number of Pins :

3

Mount :

Surface Mount

Power Dissipation :

310mW

Max Collector Current :

200mA

Operating Temperature :

-65°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Width :

1.4mm

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Transition Frequency :

300MHz

Number of Elements :

1

Contact Plating :

Tin

hFE Min :

200

Collector Base Voltage (VCBO) :

50V

Frequency :

300MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Current - Collector Cutoff (Max) :

15nA

Collector Emitter Saturation Voltage :

90mV

Terminal Form :

Gull wing

Factory Lead Time :

19 Weeks

Package / Case :

TO-236-3, SC-59, SOT-23-3

Base Part Number :

BC847

Height :

1.1mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Qualification Status :

Not Qualified

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Transistor Type :

NPN

Weight :

7.994566mg

Pin Count :

3

Element Configuration :

Single

Length :

3.05mm

Number of Terminations :

3

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Current - Collector (Ic) (Max) :

100mA

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Max Breakdown Voltage :

45V

Gain Bandwidth Product :

300MHz

Additional Feature :

High Reliability

Transistor Application :

SWITCHING

Pbfree Code :

yes

Max Junction Temperature (Tj) :

150°C

Published :

2012

Max Power Dissipation :

300mW