BC847B
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- Mfr.Part #
- BC847B
- Manufacturer
- YANGJIE
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- SOT-23 NPN 0.2W 0.1A 50V Transis
- Stock
- 18,927
- In Stock ：
- 18,927
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- Manufacturer :
- YANGJIE
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Additional Feature :
- High Reliability
- Collector Emitter Voltage (VCEO) :
- 45V
- Pin Count :
- 3
- Max Collector Current :
- 200mA
- Collector Emitter Breakdown Voltage :
- 45V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pbfree Code :
- yes
- Contact Plating :
- Tin
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- 50V
- Max Breakdown Voltage :
- 45V
- Current - Collector Cutoff (Max) :
- 15nA
- Published :
- 2012
- Transition Frequency :
- 300MHz
- Qualification Status :
- Not Qualified
- Width :
- 1.4mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Peak Reflow Temperature (Cel) :
- 260
- REACH SVHC :
- No SVHC
- Length :
- 3.05mm
- Collector Emitter Saturation Voltage :
- 90mV
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Frequency :
- 300MHz
- Element Configuration :
- Single
- Max Power Dissipation :
- 300mW
- Number of Terminations :
- 3
- hFE Min :
- 200
- Terminal Position :
- Dual
- Height :
- 1.1mm
- Number of Elements :
- 1
- Base Part Number :
- BC847
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Weight :
- 7.994566mg
- Max Junction Temperature (Tj) :
- 150°C
- Factory Lead Time :
- 19 Weeks
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 6V
- Operating Temperature :
- -65°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 300MHz
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Current - Collector (Ic) (Max) :
- 100mA
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 310mW
- Datasheets
- BC847B
NPN -65°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC847B-7-F Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 5V.The collector emitter saturation voltage is 90mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 300MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 200mA volts can be achieved.
BC847B-7-F Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 90mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
BC847B-7-F Applications
There are a lot of Diodes Incorporated
BC847B-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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