BC847B
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- Mfr.Part #
- BC847B
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 18,927
- In Stock ：
- 18,927
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Gain Bandwidth Product :
- 300MHz
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 1.1mm
- Mount :
- Surface Mount
- Qualification Status :
- Not Qualified
- Mounting Type :
- Surface Mount
- Additional Feature :
- High Reliability
- Frequency :
- 300MHz
- Factory Lead Time :
- 19 Weeks
- Max Collector Current :
- 200mA
- Operating Temperature :
- -65°C~150°C TJ
- Polarity/Channel Type :
- NPN
- Collector Emitter Saturation Voltage :
- 90mV
- Weight :
- 7.994566mg
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Terminal Position :
- Dual
- Pin Count :
- 3
- Base Part Number :
- BC847
- hFE Min :
- 200
- Power Dissipation :
- 310mW
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- Length :
- 3.05mm
- Transistor Type :
- NPN
- Published :
- 2012
- Number of Terminations :
- 3
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 50V
- Current - Collector Cutoff (Max) :
- 15nA
- Max Power Dissipation :
- 300mW
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Max Junction Temperature (Tj) :
- 150°C
- Collector Emitter Voltage (VCEO) :
- 45V
- Number of Elements :
- 1
- Transition Frequency :
- 300MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 45V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Emitter Base Voltage (VEBO) :
- 6V
- Max Breakdown Voltage :
- 45V
- REACH SVHC :
- No SVHC
- Current - Collector (Ic) (Max) :
- 100mA
- Width :
- 1.4mm
- Datasheets
- BC847B
BC847B Documents
NPN -65°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC847B-7-F Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 5V.The collector emitter saturation voltage is 90mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 300MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 200mA volts can be achieved.
BC847B-7-F Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 90mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
BC847B-7-F Applications
There are a lot of Diodes Incorporated
BC847B-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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