BC847B-7-F
- Mfr.Part #
- BC847B-7-F
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 17,943
- In Stock :
- 17,943
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 7.994566mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Collector Emitter Saturation Voltage :
- 90mV
- Frequency :
- 300MHz
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Length :
- 3.05mm
- Number of Pins :
- 3
- Current - Collector (Ic) (Max) :
- 100mA
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 15nA
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 19 Weeks
- Transition Frequency :
- 300MHz
- Width :
- 1.4mm
- Power Dissipation :
- 310mW
- hFE Min :
- 200
- Contact Plating :
- Tin
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Operating Temperature :
- -65°C~150°C TJ
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 45V
- Additional Feature :
- High Reliability
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 45V
- Max Collector Current :
- 200mA
- Gain Bandwidth Product :
- 300MHz
- Max Power Dissipation :
- 300mW
- Max Breakdown Voltage :
- 45V
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 50V
- Published :
- 2012
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Max Junction Temperature (Tj) :
- 150°C
- Lead Free :
- Lead Free
- Base Part Number :
- BC847
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Height :
- 1.1mm
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Datasheets
- BC847B-7-F

NPN -65°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC847B-7-F Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 5V.The collector emitter saturation voltage is 90mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 300MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 200mA volts can be achieved.
BC847B-7-F Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 90mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
BC847B-7-F Applications
There are a lot of Diodes Incorporated
BC847B-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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