BC847AWT1G
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- Mfr.Part #
- BC847AWT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SC70-3
- Stock
- 1,821
- In Stock ：
- 1,821
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 100MHz
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Transistor Application :
- AMPLIFIER
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Factory Lead Time :
- 2 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- 100mA
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Collector Emitter Saturation Voltage :
- 600mV
- Collector Emitter Breakdown Voltage :
- 45V
- hFE Min :
- 90
- Number of Terminations :
- 3
- Frequency :
- 100MHz
- Max Power Dissipation :
- 150mW
- Pin Count :
- 3
- Max Breakdown Voltage :
- 45V
- Contact Plating :
- Tin
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- Transition Frequency :
- 100MHz
- Length :
- 2.2mm
- Published :
- 2005
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Type :
- NPN
- Width :
- 1.35mm
- Surface Mount :
- yes
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- 45V
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- SC-70, SOT-323
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Height :
- 900μm
- Collector Emitter Voltage (VCEO) :
- 45V
- Number of Elements :
- 1
- Halogen Free :
- Halogen Free
- Max Collector Current :
- 100mA
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Power Dissipation :
- 150mW
- Collector Base Voltage (VCBO) :
- 50V
- Datasheets
- BC847AWT1G
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC847AWT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 110 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of 600mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC847AWT1G Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC847AWT1G Applications
There are a lot of ON Semiconductor
BC847AWT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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