BC847AWT1
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- Mfr.Part #
- BC847AWT1
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANSISTOR NPN 45V 100MA SOT-323
- Stock
- 25,042
- In Stock ：
- 25,042
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Surface Mount :
- yes
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Terminal Position :
- Dual
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Collector Emitter Saturation Voltage :
- 600mV
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 50V
- Current Rating :
- 100mA
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Emitter Base Voltage (VEBO) :
- 6V
- Max Collector Current :
- 100mA
- Max Power Dissipation :
- 150mW
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 45V
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 100MHz
- Transistor Application :
- AMPLIFIER
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 45V
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Package / Case :
- SC-70, SOT-323
- Contact Plating :
- Tin
- Height :
- 900μm
- Published :
- 2005
- Length :
- 2.2mm
- Element Configuration :
- Single
- Power Dissipation :
- 150mW
- ECCN Code :
- EAR99
- Width :
- 1.35mm
- Radiation Hardening :
- No
- Factory Lead Time :
- 2 Weeks
- Number of Terminations :
- 3
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Transition Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Voltage (VCEO) :
- 45V
- Halogen Free :
- Halogen Free
- Terminal Form :
- Gull wing
- Frequency :
- 100MHz
- hFE Min :
- 90
- Max Breakdown Voltage :
- 45V
- Datasheets
- BC847AWT1
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC847AWT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 110 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of 600mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC847AWT1G Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC847AWT1G Applications
There are a lot of ON Semiconductor
BC847AWT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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