BC847AW
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- Mfr.Part #
- BC847AW
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- BC847AW - NPN BIPOLAR TRANSISTOR
- Stock
- 7,305
- In Stock ：
- 7,305
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 100mA
- Published :
- 2017
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 6V
- Gain Bandwidth Product :
- 300MHz
- Max Power Dissipation :
- 200mW
- Collector Base Voltage (VCBO) :
- 50V
- Collector Emitter Saturation Voltage :
- 600mV
- Width :
- 1.35mm
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 45V
- Transition Frequency :
- 300MHz
- Height :
- 1mm
- Power Dissipation :
- 200mW
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Element Configuration :
- Single
- Operating Temperature :
- -65°C~150°C TJ
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Qualification Status :
- Not Qualified
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Package / Case :
- SC-70, SOT-323
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Position :
- Dual
- Length :
- 2.2mm
- Frequency :
- 300MHz
- Pin Count :
- 3
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 15 Weeks
- Weight :
- 6.010099mg
- Packaging :
- Tape and Reel (TR)
- Contact Plating :
- Tin
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 45V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Base Part Number :
- BC847
- Max Breakdown Voltage :
- 65V
- Datasheets
- BC847AW
NPN -65°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC847AW-7-F Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 110 @ 2mA 5V.With a collector emitter saturation voltage of 600mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 300MHz is present in the part.There is a breakdown input voltage of 65V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
BC847AW-7-F Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
BC847AW-7-F Applications
There are a lot of Diodes Incorporated
BC847AW-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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