BC847AW,135
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- Mfr.Part #
- BC847AW,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA BC847AW - SMALL SIG
- Stock
- 200,000
- In Stock ：
- 200,000
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 45V
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Frequency :
- 100MHz
- Collector Base Voltage (VCBO) :
- 50V
- Base Part Number :
- BC847
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Element Material :
- SILICON
- Series :
- Automotive, AEC-Q101
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- NPN
- Terminal Form :
- Gull wing
- Pin Count :
- 3
- Power Dissipation :
- 200mW
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Max Power Dissipation :
- 200mW
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- Mount :
- Surface Mount
- Package / Case :
- SC-70, SOT-323
- Published :
- 2014
- Number of Pins :
- 3
- Transition Frequency :
- 100MHz
- Number of Elements :
- 1
- Max Collector Current :
- 100mA
- Factory Lead Time :
- 4 Weeks
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 45V
- Gain Bandwidth Product :
- 100MHz
- Contact Plating :
- Tin
- Terminal Position :
- Dual
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- JESD-609 Code :
- e3
- Datasheets
- BC847AW,135
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC847AW,135 Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 100mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.100MHz is present in the transition frequency.Maximum collector currents can be below 100mA volts.
BC847AW,135 Features
the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847AW,135 Applications
There are a lot of Nexperia USA Inc.
BC847AW,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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