BC847AW,135
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- Mfr.Part #
- BC847AW,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA BC847AW - SMALL SIG
- Stock
- 200,000
- In Stock ：
- 200,000
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 4 Weeks
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- Max Collector Current :
- 100mA
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 45V
- Mount :
- Surface Mount
- Transition Frequency :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 6V
- Series :
- Automotive, AEC-Q101
- Base Part Number :
- BC847
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Published :
- 2014
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 45V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Frequency :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Max Power Dissipation :
- 200mW
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- 50V
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 100MHz
- Power Dissipation :
- 200mW
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Package / Case :
- SC-70, SOT-323
- Mounting Type :
- Surface Mount
- Datasheets
- BC847AW,135
BC847AW,135 Documents
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC847AW,135 Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 100mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.100MHz is present in the transition frequency.Maximum collector currents can be below 100mA volts.
BC847AW,135 Features
the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847AW,135 Applications
There are a lot of Nexperia USA Inc.
BC847AW,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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