BC847AQBZ
- Mfr.Part #
- BC847AQBZ
- Manufacturer
- Nexperia
- Package / Case
- 3-XDFN Exposed Pad
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A DFN1110D-3
- Stock
- 514
- In Stock :
- 514
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 45V
- Series :
- BC847xQB
- Mounting Type :
- Surface Mount, Wettable Flank
- Transistor Type :
- NPN
- Package / Case :
- 3-XDFN Exposed Pad
- Current - Collector (Ic) (Max) :
- 100mA
- Operating Temperature :
- 150°C TJ
- Frequency - Transition :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Power - Max :
- 340mW
- Datasheets
- BC847AQBZ

NPN 150°C TJ 15nA ICBO 3-XDFN Exposed Pad Surface Mount, Wettable Flank
BC847AQBZ Overview
This device has a DC current gain of 110 @ 2mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Detection of Collector Emitter Breakdown at 45V maximal voltage is present.
BC847AQBZ Features
the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
BC847AQBZ Applications
There are a lot of Nexperia USA Inc.
BC847AQBZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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