BC847AMTF
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- Mfr.Part #
- BC847AMTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 43,065
- In Stock ：
- 43,065
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 300MHz
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Collector Emitter Saturation Voltage :
- 200mV
- Base Part Number :
- BC847
- Number of Elements :
- 1
- Published :
- 2011
- Max Breakdown Voltage :
- 45V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current Rating :
- 100mA
- hFE Min :
- 110
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 45V
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Max Collector Current :
- 100mA
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Terminal Form :
- Gull wing
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 310mW
- Factory Lead Time :
- 17 Weeks
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Frequency :
- 300MHz
- Contact Plating :
- Tin
- Collector Base Voltage (VCBO) :
- 50V
- Number of Terminations :
- 3
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 300MHz
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 310mW
- Element Configuration :
- Single
- Voltage - Rated DC :
- 45V
- Terminal Position :
- Dual
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Voltage (VCEO) :
- 45V
- Qualification Status :
- Not Qualified
- Width :
- 1.3mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- RoHS Status :
- RoHS Compliant
- Length :
- 2.92mm
- Height :
- 930μm
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 30mg
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Datasheets
- BC847AMTF
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC847AMTF Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 110 @ 2mA 5V.The collector emitter saturation voltage is 200mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.In the part, the transition frequency is 300MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BC847AMTF Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC847AMTF Applications
There are a lot of ON Semiconductor
BC847AMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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